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| inchange semiconductor product specification silicon pnp power transistors 2N4898 2n4899 2n4900 description ? ? with to-66 package ? low collector saturation voltage ? excellent safe operating area ? 2n4900 complement to type 2n4912 applications ? designed for driver circuits,switching and amplifier applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2N4898 -40 2n4899 -60 v cbo collector-base voltage 2n4900 open emitter -80 v 2N4898 -40 2n4899 -60 v ceo collector-emitter voltage 2n4900 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -1.0 a i cm collector current-peak -4.0 a i b base current -1.0 a p d total power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 7.0 ??/w fig.1 simplified outline (to-66) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2N4898 2n4899 2n4900 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N4898 -40 2n4899 -60 v ceo(sus) collector-emitter sustaining voltage 2n4900 i c =-0.1a ;i b =0 -80 v v cesat collector-emitter saturation voltage i c =-1a; i b =-0.1a -0.6 v v besat collector-emitter saturation voltage i c =-1a ;i b =-0.1a -1.3 v v be base-emitter on voltage i c =-1a ; v ce =-1v -1.3 v 2N4898 v ce =-20v; i b =0 2n4899 v ce =-30v; i b =0 i ceo collector cut-off current 2n4900 v ce =-40v; i b =0 -0.5 ma i cex collector cut-off current v ce =rated v ceo ; v be(off) =1.5v t c =150 ?? -0.1 -1.0 ma i cbo collector cut-off current v cb =rated v cbo ; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-50ma ; v ce =-1v 40 h fe-2 dc current gain i c =-500ma ; v ce =-1v 20 100 h fe-3 dc current gain i c =-1.0a ; v ce =-1v 10 c ob output capacitance i e =0;v cb =-10v;f=1mhz 100 pf f t transition frequency i c =-250ma;v ce =-10v 3.0 mhz inchange semiconductor product specification 3 silicon pnp power transistors 2N4898 2n4899 2n4900 package outline fig.2 outline dimensions |
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